Influence of ferromagnetic substrate on the magnetoresistance of Cr film across a nonmagnetic insulating layer
نویسندگان
چکیده
~5 nm! Cr/(x nm) MgO/Mn0.52Zn0.48Fe2O4 ~MnZn spinel! substrate (1,x,7 nm), as well as ~5 nm! Cr/~7 nm! MgO/glass substrate structures have been grown using molecular beam epitaxy. The influence of the MnZn spinel on the in-plane transport and magnetotransport properties of the Cr layer were studied. The existence of pinholes in the MgO layer was explored by evaluating resistance versus temperature, R(T), dependencies. A hump was observed on the R(T) curves for the MgO layer thickness (tMgO) less than 5 nm. This results from the electrical coupling between the Cr film and the MnZn spinel substrate through the pinholes in the MgO layer. A reversal of the magnetoresistance ~MR! sign in Cr film was observed when tMgO is less than 7 nm. It is thought that the effect of the electrical coupling through the pinholes and the magnetostatic coupling are not the reasons for the observed negative MR. A model is proposed which suggests that the magnetic structure in the Cr film adjoining a pinhole is distorted because of the exchange coupling. Such areas in the Cr film are thought to contribute to the negative MR. © 2003 American Institute of Physics. @DOI: 10.1063/1.1606520#
منابع مشابه
Tunnelling anisotropic magnetoresistance due to antiferromagnetic CoO tunnel barriers
A new approach in spintronics is based on spin-polarized charge transport phenomena governed by antiferromagnetic (AFM) materials. Recent studies have demonstrated the feasibility of this approach for AFM metals and semiconductors. We report tunneling anisotropic magnetoresistance (TAMR) due to the rotation of antiferromagnetic moments of an insulating CoO layer, incorporated into a tunnel junc...
متن کاملParallel charge sheets of electron liquid and gas in La0.5Sr0.5TiO3/SrTiO3 heterostructures
We show here a new phenomenon in La0.5Sr0.5TiO3/SrTiO3 (LSTO/STO) heterostructures; that is a coexistence of three-dimensional electron liquid (3DEL) and 2D electron gas (2DEG), separated by an intervening insulating LSTO layer. The two types of carriers were revealed through multi-channel analysis of the evolution of nonlinear Hall effect as a function of film thickness, temperature and back g...
متن کاملSpin-valve-like magnetoresistance in Mn2NiGa at room temperature.
Spin valves have revolutionized the field of magnetic recording and memory devices. Spin valves are generally realized in thin film heterostructures, where two ferromagnetic (FM) layers are separated by a nonmagnetic conducting layer. Here, we demonstrate spin-valve-like magnetoresistance at room temperature in a bulk ferrimagnetic material that exhibits a magnetic shape memory effect. The orig...
متن کاملTailoring tricolor structure of magnetic topological insulator for robust axion insulator
Exploration of novel electromagnetic phenomena is a subject of great interest in topological quantum materials. One of the unprecedented effects to be experimentally verified is the topological magnetoelectric (TME) effect originating from an unusual coupling of electric and magnetic fields in materials. A magnetic heterostructure of topological insulator (TI) hosts such exotic magnetoelectric ...
متن کاملترابرد الکتریکی وابسته به اسپین در ساختارهای نامتجانس Fe-MgO-Fe
In this paper, spin-dependent electrical transport properties are investigated in a single-crystal magnetic tunnel junction (MTJ) which consists of two ferromagnetic Fe electrodes separated by an MgO insulating barrier. These properties contain electric current, spin polarization and tunnel magnetoresistance (TMR). For this purpose, spin-dependent Hamiltonian is described for Δ1 and Δ5 bands in...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره شماره
صفحات -
تاریخ انتشار 2003